Tuesday, February 26, 2013

1302.5939 (Mehdi Khodayari et al.)

Floating Electrode Electrowetting on Hydrophobic Dielectric with an SiO2
Layer
   [PDF]

Mehdi Khodayari, Benjamin Hahne, Nathan B. Crane, Alex A. Volinsky
A floating electrode electrowetting process is introduced, caused by dc voltage applied to a 15 micro liter citric acid droplet placed on the Cytop hydrophobic surface without the typical electrical connection to the substrate electrode. It is proposed that the charge redistribution in the droplet is the underpinning mechanism. For the droplet to hold the charges, a thermal SiO2 layer underneath the Cytop provides a highly resistive insulation, which is the key contribution. The electrowetting process with an SiO2 layer shows a memory effect, as the droplet wetting angle stays the same after the voltage is switched off and the electrode is removed from the droplet in both conventional and floating electrode electrowetting processes. The floating electrode electrowetting configuration can help developing novel reliable electrowetting-based devices.
View original: http://arxiv.org/abs/1302.5939

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